Deposition of SiC thin films using pulsed sputtering of a hollow cathode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00331189" target="_blank" >RIV/68378271:_____/09:00331189 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Deposition of SiC thin films using pulsed sputtering of a hollow cathode
Original language description
Thin films of SiC have been deposited using a hollow cathode sputtering methodes. Crystalline SiC thin films were deposited by pulsed hollow cathode plasma excitation.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/1M06002" target="_blank" >1M06002: Optical structures, detection systems and relevant technologies for low photon number applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Materials Science and Engineering
ISSN
1934-8959
e-ISSN
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Volume of the periodical
3
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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