The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00370779" target="_blank" >RIV/68378271:_____/10:00370779 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.131" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.131</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.131" target="_blank" >10.4028/www.scientific.net/MSF.645-648.131</a>

Result language

angličtina

Original language name

The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode

Original language description

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Science Forum

ISSN

0255-5476

e-ISSN

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Volume of the periodical

645-648

Issue of the periodical within the volume

1-2

Country of publishing house

CH - SWITZERLAND

Number of pages

4

Pages from-to

131-134

UT code for WoS article

000279657600030

EID of the result in the Scopus database

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