Decomposition of mixed phase silicon Raman spectra

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00339516" target="_blank" >RIV/68378271:_____/09:00339516 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Decomposition of mixed phase silicon Raman spectra
Original language description
Series of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology ? 2009
ISBN
978-1-60511-126-1
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
Materials Research Society
Place of publication
Warrendale, PA
Event location
San Francisco, CA
Event date
Apr 13, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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