Raman mapping of microcrystalline silicon thin films with high spatial resolution
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00347763" target="_blank" >RIV/68378271:_____/10:00347763 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Raman mapping of microcrystalline silicon thin films with high spatial resolution
Original language description
Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix.Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi C: Current Topics in Solid State Physics
ISSN
1862-6351
e-ISSN
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Volume of the periodical
7
Issue of the periodical within the volume
3-4
Country of publishing house
DE - GERMANY
Number of pages
4
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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