Microscopic measurements of polycrystalline silicon thin films on glass
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00375317" target="_blank" >RIV/68378271:_____/11:00375317 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4229/26thEUPVSEC2011-3AV.3.14" target="_blank" >http://dx.doi.org/10.4229/26thEUPVSEC2011-3AV.3.14</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4229/26thEUPVSEC2011-3AV.3.14" target="_blank" >10.4229/26thEUPVSEC2011-3AV.3.14</a>
Alternative languages
Result language
angličtina
Original language name
Microscopic measurements of polycrystalline silicon thin films on glass
Original language description
Microscopic study of charge transport collection in silicon thin films can be studied with resolution down to 10 nm, which allows study of individual crystalline grains in microcrystalline silicon or individual crystallites separated by grain boundarieswithin the polycrystalline silicon grains on glass. We have developed two complementary approaches: conductive atomic force microscopy (C-AFM) and measurements with two probes navigated by a scanning electron microscope. We have also proposed and testeda novel procedure for measurements of the same spot after repeated mounting. The procedure uses simple nanoindentation marks which can be easily localized with high precision in various microscopes used (optical, scanning electron microscope, CAFM). Thisenables measurements of the same spot on a sample before and after technological steps (e.g. hydrogenation or deposition) and thus an investigation of microscopic effects of these treatments.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition
ISBN
3-936338-27-2
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
2788-2790
Publisher name
WIP München
Place of publication
München
Event location
Hamburg
Event date
Sep 5, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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