Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00341570" target="_blank" >RIV/68378271:_____/10:00341570 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition
Original language description
Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma-enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 ?m/min) and unique sharpness (< 10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi-Rapid Research Letters
ISSN
1862-6254
e-ISSN
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Volume of the periodical
4
Issue of the periodical within the volume
1-2
Country of publishing house
DE - GERMANY
Number of pages
3
Pages from-to
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UT code for WoS article
000275226400022
EID of the result in the Scopus database
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