Comment on "Current routes in hydrogenated microcrystalline silicon"

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00355032" target="_blank" >RIV/68378271:_____/10:00355032 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Comment on "Current routes in hydrogenated microcrystalline silicon"

Original language description

We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

1098-0121

e-ISSN

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Volume of the periodical

81

Issue of the periodical within the volume

23

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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