Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00372226" target="_blank" >RIV/68378271:_____/11:00372226 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssr.201105413" target="_blank" >http://dx.doi.org/10.1002/pssr.201105413</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssr.201105413" target="_blank" >10.1002/pssr.201105413</a>

Result language
angličtina
Original language name
Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy
Original language description
Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon (?c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 enhanced the current flows through the photosensitive ?c-Si:H layer. The local current map and current?voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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