Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00373608" target="_blank" >RIV/68378271:_____/11:00373608 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1186/1556-276X-6-145" target="_blank" >http://dx.doi.org/10.1186/1556-276X-6-145</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1186/1556-276X-6-145" target="_blank" >10.1186/1556-276X-6-145</a>

Result language
angličtina
Original language name
Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth
Original language description
Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors showthat such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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