Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00354945" target="_blank" >RIV/68378271:_____/10:00354945 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon
Original language description
Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon. Various types of conductive tips in atomic force microscope (AFM) are used to localize field-enhanced metal-induced solid phase crystallization (FE-MISPC) of amorphous silicon at room temperature down to nanoscale dimensions.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
518
Issue of the periodical within the volume
21
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
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UT code for WoS article
000280989100016
EID of the result in the Scopus database
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