Generating ordered Si nanocrystals via atomic force microscopy
Result description
We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200?400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps.
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Generating ordered Si nanocrystals via atomic force microscopy
Original language description
We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200?400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps.
Czech name
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Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Non-Crystalline Solids
ISSN
0022-3093
e-ISSN
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Volume of the periodical
358
Issue of the periodical within the volume
17
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
"2118?2121"
UT code for WoS article
000310394700046
EID of the result in the Scopus database
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Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2012