Light trapping abilities of silicon thin films measured by Raman spectroscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00386621" target="_blank" >RIV/68378271:_____/12:00386621 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.24" target="_blank" >http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.24</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.24" target="_blank" >10.4229/27thEUPVSEC2012-3CV.2.24</a>

Result language
angličtina
Original language name
Light trapping abilities of silicon thin films measured by Raman spectroscopy
Original language description
Raman spectroscopy is used as a tool for measuring the light trapping abilities of thin crystalline silicon films for photovoltaic applications. Comparison of samples with different scattering characteristic is reported and the significant difference inthe absolute Raman intensities is explained by light trapping effects. Raman spectroscopy is proposed as a promising tool for in-line characterization of silicon thin films during fabrication of solar cell modules.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition
ISBN
3-936338-28-0
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
2431-2433
Publisher name
WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG
Place of publication
München
Event location
Frankfurt
Event date
Sep 24, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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