Preferred crystal orientation in Thin-Film nanocrystalline Silicon determined by Raman Spectroscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F13%3A43919654" target="_blank" >RIV/49777513:23640/13:43919654 - isvavai.cz</a>
Result on the web
<a href="http://www.journals4free.com/link.jsp?l=13076633" target="_blank" >http://www.journals4free.com/link.jsp?l=13076633</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preferred crystal orientation in Thin-Film nanocrystalline Silicon determined by Raman Spectroscopy
Original language description
In this contribution, we report a unique approach of determining preferred orientation in hydrogenated thin film nanocrystalline silicon (nc-Si:H) using Polarized Raman Spectroscopy (PRS). This method is based on the fact that molecular vibrations in films under polarized light also give rise to polarization-dependent Raman scattered intensity depending on the grain crystal orientation of the irradiated material. First, the dependence of the Raman intensity of the 520 cm -1 TO peak on rotation angle ismeasured on (100), (110), and (111) single-crystalline silicon wafers
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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