Polarized Raman scattering study of PSN single crystals and epitaxial thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00451192" target="_blank" >RIV/68378271:_____/15:00451192 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1142/S2010135X15500137" target="_blank" >http://dx.doi.org/10.1142/S2010135X15500137</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1142/S2010135X15500137" target="_blank" >10.1142/S2010135X15500137</a>

Result language
angličtina
Original language name
Polarized Raman scattering study of PSN single crystals and epitaxial thin films
Original language description
This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc0.5Nb0.5O3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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