Light trapping in thin-film solar cells measured by Raman spectroscopy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432256" target="_blank" >RIV/68378271:_____/14:00432256 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4895931" target="_blank" >http://dx.doi.org/10.1063/1.4895931</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4895931" target="_blank" >10.1063/1.4895931</a>
Alternative languages
Result language
angličtina
Original language name
Light trapping in thin-film solar cells measured by Raman spectroscopy
Original language description
In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442nm, 514nm, 633nm, and 785nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
105
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
"111106-1"-"111106-4"
UT code for WoS article
000342995800007
EID of the result in the Scopus database
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