Comparative study on dry etching of polycrystalline diamond thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389069" target="_blank" >RIV/68378271:_____/12:00389069 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/12:00200427

Result on the web

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.023" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2011.07.023</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.023" target="_blank" >10.1016/j.vacuum.2011.07.023</a>

Result language

angličtina

Original language name

Comparative study on dry etching of polycrystalline diamond thin films

Original language description

The reactive ion etching technique was used to etch diamond films. In this study we investigate the influence of process parameters (pressure, rf power, gas composition). The surface morphology of etched diamond films was characterized by SEM and the chemical composition of the etched film part was investigated by Raman Spectroscopy. We found that the gas composition had a crucial effect on the diamond film morphology. The use of CF4 gas resulted in flatter surfaces and lateral-like etching, while the use of pure O2 gas resulted in needle-like structures. Addition of argon to the reactant precursors increased the ion bombardment, which in turn increased the formation of non-diamond phases. Next, increasing the rf power from 100 to 500 W increased the etching rate from 5.4 to 8.6 ?m/h. In contrast to this observation, the rise of process pressure from 80 to 150 mTorr lowered the etching rate from 5.6 down to 3.6 ?m/h.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

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Volume of the periodical

86

Issue of the periodical within the volume

6

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

799-802

UT code for WoS article

000301018400053

EID of the result in the Scopus database

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