Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396224" target="_blank" >RIV/68378271:_____/13:00396224 - isvavai.cz</a>

Alternative codes found

RIV/61989592:15310/13:33145817

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2013.06.070" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.06.070</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.06.070" target="_blank" >10.1016/j.tsf.2013.06.070</a>

Result language

angličtina

Original language name

Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Original language description

TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrateholder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

542

Issue of the periodical within the volume

Sept

Country of publishing house

CH - SWITZERLAND

Number of pages

9

Pages from-to

91-99

UT code for WoS article

000323859400015

EID of the result in the Scopus database

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