Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00397887" target="_blank" >RIV/68378271:_____/13:00397887 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes
Original language description
CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same inthe HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LH12045" target="_blank" >LH12045: Fabrication and analysis of the properties of Cu(In,X)Se2 thin-film solar cells prepared from plasma-sputtered and spray-deposited precursors</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Advanced Oxidation Technologies
ISSN
1203-8407
e-ISSN
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Volume of the periodical
16
Issue of the periodical within the volume
2
Country of publishing house
CA - CANADA
Number of pages
6
Pages from-to
314-319
UT code for WoS article
000322719200014
EID of the result in the Scopus database
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