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Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00421578" target="_blank" >RIV/68378271:_____/13:00421578 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1117/12.2017124" target="_blank" >http://dx.doi.org/10.1117/12.2017124</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2017124" target="_blank" >10.1117/12.2017124</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

  • Original language description

    We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb QW in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-IR spectral range, as well as for photovoltaic elements.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    INTEGRATED OPTICS: PHYSICS AND SIMULATIONS ( Proceedings of SPIE 8781)

  • ISBN

    978-0-8194-9583-9

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    9

  • Pages from-to

    1-9

  • Publisher name

    SPIE

  • Place of publication

    BELLINGHAM

  • Event location

    Prague

  • Event date

    Apr 17, 2013

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000323312700014