Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00383762" target="_blank" >RIV/68378271:_____/12:00383762 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4739279" target="_blank" >http://dx.doi.org/10.1063/1.4739279</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4739279" target="_blank" >10.1063/1.4739279</a>
Alternative languages
Result language
angličtina
Original language name
Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
Original language description
We report superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by MOVPE. Electroluminescence spectra for different driving currents were measured at 77and 300 K. Such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2?3 times in the current range 50?200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ?EC=1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Calculation of the size quantization energy levels is presented, and possible cases of impact ionization, depending on the band offset ?EC at theinterface and on the quantum well width, are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices as well as for photovoltaic elements.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GAP102%2F10%2F1201" target="_blank" >GAP102/10/1201: Quantum dots for detectors and other devices</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
—
Volume of the periodical
112
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
"023108-1"-"023108-10"
UT code for WoS article
000308424500008
EID of the result in the Scopus database
—