Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00395842" target="_blank" >RIV/68378271:_____/13:00395842 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1134/S1063782613080137" target="_blank" >http://dx.doi.org/10.1134/S1063782613080137</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1134/S1063782613080137" target="_blank" >10.1134/S1063782613080137</a>

Result language
angličtina
Original language name
Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy
Original language description
The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6?0.8 eV are observed at temperatures of T = 77 and 300 K. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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