Superlinear luminescence and enhancement of optical power in GaSb-based heterostructures with high conduction-band offsets and nanostructures with deep quantum wells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396176" target="_blank" >RIV/68378271:_____/13:00396176 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Superlinear luminescence and enhancement of optical power in GaSb-based heterostructures with high conduction-band offsets and nanostructures with deep quantum wells
Original language description
Superlinear luminescence in the spectral range of 0.2?0.8 eV was observed. InAsSb narrow-gap active layer in quantum-sized heterostructures with deep Al(As)Sb/InAs0.84Sb0.16/Al(As)Sb QW was grown by MOVPE on a n-GaSb substrate. In both types of structures under study the obtained effects of superlinear luminescence can be explained by a similar mechanism: the contribution to radiative recombination of extra electron?hole pairs due to impact ionization by hot electrons that were heated via high conduction-band offset at the interface of narrow-gap heterostructures or in a deep QW (inverse Auger process). Optical power increase in both types of structures is described by the same power law P = AIB. B reaches 1.5?2.2 in bulk heterostructures and 2?3 in nanostructures at 77 and 300 K due to the stronger localization of carriers in a deep QW. Theoretical estimations are in good agreement with the experimental data.
Czech name
—
Czech description
—
Classification
Type
C - Chapter in a specialist book
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
ISBN
9780819495969
Number of pages of the result
27
Pages from-to
105-131
Number of pages of the book
892
Publisher name
SPIE Press
Place of publication
Bellingham
UT code for WoS chapter
—