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EN
ČeštinaEnglish

High-temperature superlinear luminescence in GaSb based nanostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells grown by MOVPE

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455391" target="_blank" >RIV/68378271:_____/15:00455391 - isvavai.cz</a>

  • Result on the web

    —

  • DOI - Digital Object Identifier

    —

Alternative languages

  • Result language

    angličtina

  • Original language name

    High-temperature superlinear luminescence in GaSb based nanostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells grown by MOVPE

  • Original language description

    The electroluminescence properties of the nanoheterostructure with deep quantum well Al(As)Sb/InAsSb/Al(As)Sb grown by MOVPE on GaSb-substrate are studied. EL spectra was measured in 1.82.4 ?m (0.5?0.68 eV) range at elevated temperatures T = 20150 °C. For the first time the increasing of optical power at temperature up to 110 °C and futher sharp decreasing was observed. It was shown that such untypical behavior of the optical power temperature dependence is related to the features of the radiative recombination and Auger recombination processes of charge carriers in investigated structure.

  • Czech name

    —

  • Czech description

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Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

    —

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Nanostructures: Physics and Technology. Proceedings

  • ISBN

    978-5-7422-4876-7

  • ISSN

    —

  • e-ISSN

    —

  • Number of pages

    2

  • Pages from-to

    77-78

  • Publisher name

    Academic University Publishing

  • Place of publication

    Saint Petersburg

  • Event location

    Saint Petersburg

  • Event date

    Jun 22, 2015

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    —

Similar results(10)

Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxySuperlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wellsConstitution of the systems {Ta,Nb,V}-Sb in the Sb-rich part (> 50 at.% Sb)