Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00422836" target="_blank" >RIV/68378271:_____/13:00422836 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.radphyschem.2013.04.025" target="_blank" >http://dx.doi.org/10.1016/j.radphyschem.2013.04.025</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.radphyschem.2013.04.025" target="_blank" >10.1016/j.radphyschem.2013.04.025</a>

Result language
angličtina
Original language name
Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography
Original language description
Silicon crystalline samples were exposed to intense single pulses of XUV radiation (?=13.5 nm) what lead to melting and ablation of the surface material. The deformation field around craters along the whole thickness of silicon wafers was observed by means of the synchrotron transmission section topography using the beam perpendicular to the surface of the sample.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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