Microwave characterization of dielectric substrates for thin films deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00423068" target="_blank" >RIV/68378271:_____/13:00423068 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Microwave characterization of dielectric substrates for thin films deposition
Original language description
A new electrode-free method is proposed for microwave characterization of low-loss single crystal and ceramic dielectric substrates used for thin films deposition. The substrate is considered and characterized as a thin dielectric resonator. Both TE01 delta and HE11 delta resonance modes were activated in the substrates with a dielectric permittivity above 10. The in-plane averaged dielectric permittivity and losses of a number of substrates were measured in a broad temperature range using the TE01 delta mode. The HE11 delta modes are proposed for the in-plane dielectric anisotropy characterization. In-plane components of anisotropic dielectric parameters of the (110) DyScO3 substrate were measured.
Czech name
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Czech description
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Project
<a href="/en/project/GAP204%2F12%2F1163" target="_blank" >GAP204/12/1163: Phonon and dielectric spectroscopy of multiferroics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology (ELNANO)
ISBN
978-1-4673-4672-6
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
17-20
Publisher name
IEEE
Place of publication
New York
Event location
Kyiv
Event date
Apr 16, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000325186800001

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