4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00425745" target="_blank" >RIV/68378271:_____/13:00425745 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2021729" target="_blank" >http://dx.doi.org/10.1117/12.2021729</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2021729" target="_blank" >10.1117/12.2021729</a>

Result language
angličtina
Original language name
4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing
Original language description
We report on development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays are presented. Novel (low work-function) contacts to GaAs are discussed and improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III
ISBN
9780819495792
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
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Publisher name
SPIE
Place of publication
Bellingham
Event location
Praha
Event date
Apr 15, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000329577700043

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