N-VSi-related center in non-irradiated 6H SiC nanostructure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00433268" target="_blank" >RIV/68378271:_____/14:00433268 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4865645" target="_blank" >http://dx.doi.org/10.1063/1.4865645</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4865645" target="_blank" >10.1063/1.4865645</a>
Alternative languages
Result language
angličtina
Original language name
N-VSi-related center in non-irradiated 6H SiC nanostructure
Original language description
We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the?-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the 14N nucleus allow us to attribute.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LM2011029" target="_blank" >LM2011029: SAFMAT - Centre of Functional Materials Analyses</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Conference On Defects In Semiconductors 2013
ISBN
978-0-7354-1215-6
ISSN
0094-243X
e-ISSN
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Number of pages
5
Pages from-to
243-247
Publisher name
AIP
Place of publication
Melville
Event location
Bologna
Event date
Jul 21, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000342321600053