Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00435666" target="_blank" >RIV/68378271:_____/14:00435666 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1134/S1063782614110049" target="_blank" >http://dx.doi.org/10.1134/S1063782614110049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063782614110049" target="_blank" >10.1134/S1063782614110049</a>

Result language

angličtina

Original language name

Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

Original language description

The results of investigation of electrically detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X band) for the identification of shallow and deep boron centers, NVSi defects, and isolated silicon vacancies (VSi), which are formed directly during the prep aration of planar nanostructures under conditions of silicon vacancy injection at the SiO2/n 6H SiC inter face without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra narrow p type quantum well, confined by ? barriers heavily doped with boron on an n 6H SiC surface, which are self ordered during pyrolytic oxide deposition and subsequent short time boron diffusion. The EDEPR data of point centers in sandwichnanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/LM2011029" target="_blank" >LM2011029: SAFMAT - Centre of Functional Materials Analyses</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductors

ISSN

1063-7826

e-ISSN

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Volume of the periodical

48

Issue of the periodical within the volume

11

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

14

Pages from-to

1467-1480

UT code for WoS article

000344812300013

EID of the result in the Scopus database

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