Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00448576" target="_blank" >RIV/68378271:_____/15:00448576 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1134/S1063782615050036" target="_blank" >http://dx.doi.org/10.1134/S1063782615050036</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1134/S1063782615050036" target="_blank" >10.1134/S1063782615050036</a>
Alternative languages
Result language
angličtina
Original language name
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
Original language description
We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequencygen- eration from the ?-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splittingconstant D and anisotropic g-factor is revealed by the ESR (X-band) method.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductors
ISSN
1063-7826
e-ISSN
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Volume of the periodical
49
Issue of the periodical within the volume
5
Country of publishing house
RU - RUSSIAN FEDERATION
Number of pages
9
Pages from-to
649-657
UT code for WoS article
000354103400018
EID of the result in the Scopus database
2-s2.0-84928898748