M/SI-GaAs/M diode: Role of the metal contact in electrical transport, ?-particle and photon detection

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00439987" target="_blank" >RIV/68378271:_____/14:00439987 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ASDAM.2014.6998643" target="_blank" >http://dx.doi.org/10.1109/ASDAM.2014.6998643</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM.2014.6998643" target="_blank" >10.1109/ASDAM.2014.6998643</a>

Result language
angličtina
Original language name
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, ?-particle and photon detection
Original language description
Current-voltage measurements as well as ?-particle and photon detection were utilized to an investigation of a novel low work function Mg-metallization in semi-insulating (SI) GaAs. An anomalous decrease of the reverse current has been observed with suchcontact in comparison with the high work function, Pt Schottky barrier. Possible explanation relates likely to the creation of quasi-degenerate region, containing accumulated electrons, at the Mg/SI-GaAs interface.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4799-5474-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
49-52
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 20, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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