The optical spectra of a-Si:H and a-SiC:H thin films measured by the absolute photothermal deflection spectroscopy (PDS)

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00440200" target="_blank" >RIV/68378271:_____/14:00440200 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.213.19" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/SSP.213.19</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.213.19" target="_blank" >10.4028/www.scientific.net/SSP.213.19</a>

Result language

angličtina

Original language name

The optical spectra of a-Si:H and a-SiC:H thin films measured by the absolute photothermal deflection spectroscopy (PDS)

Original language description

The new absolute PDS setup allows to measure simultaneously the absolute values of the optical transmittance T, reflectance R and absorptance A spectra in the spectral range 280 - 2000 nm with the typical spectral resolution 10 nm in ultraviolet and visible spectral range and 20 nm in the near infrared region. The PDS setup provides the dynamic detection range in the optical absorptance up to 4 orders of magnitude using non-toxic liquid perfluorohexane Fluorinert FC72. Here we demonstrate the usabilityof this setup on a series of intrinsic as well as doped a-Si:H and a-SiC:H thin films deposited on glass substrates by RF CVD from hydrogen, silane and methane under various conditions. The increase of the Tauc gap with increasing carbon concentration inintrinsic a-SiC:H was observed. The defect-induced localized states in the energy gap were observed in doped a-Si:H as well as undoped a-SiC:H below the Urbach absorption edge.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Solid State Phenomena

ISBN

978-3-03785-970-4

ISSN

1662-9779

e-ISSN

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Number of pages

10

Pages from-to

19-28

Publisher name

Trans Tech Publications Ltd

Place of publication

Zürich

Event location

Vladivostok

Event date

Aug 20, 2013

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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