Defect studies of thin ZnO films prepared by pulsed laser deposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00441457" target="_blank" >RIV/68378271:_____/14:00441457 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/14:10285862
Result on the web
<a href="http://dx.doi.org/10.1088/1742-6596/505/1/012021" target="_blank" >http://dx.doi.org/10.1088/1742-6596/505/1/012021</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/505/1/012021" target="_blank" >10.1088/1742-6596/505/1/012021</a>
Alternative languages
Result language
angličtina
Original language name
Defect studies of thin ZnO films prepared by pulsed laser deposition
Original language description
Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fusedsilica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F11%2F0958" target="_blank" >GAP108/11/0958: Investigation of point defects in ZnO and their interaction with hydrogen and nitrogen</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Journal of Physics: Conference Series
ISBN
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ISSN
1742-6588
e-ISSN
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Number of pages
4
Pages from-to
"012021-1"-"012021-4"
Publisher name
IOP Publishing Ltd
Place of publication
Bristol
Event location
München
Event date
Sep 15, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000338216500021