Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00456552" target="_blank" >RIV/68378271:_____/14:00456552 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2014.04.001" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2014.04.001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2014.04.001" target="_blank" >10.1016/j.optmat.2014.04.001</a>

Result language
angličtina
Original language name
Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties
Original language description
2-in. size Ce 1%:Gd3(Al1xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al?Ga was discussed.n
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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