Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00448214" target="_blank" >RIV/68378271:_____/15:00448214 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21460/15:00237817
Result on the web
<a href="http://dx.doi.org/10.1016/j.diamond.2015.01.006" target="_blank" >http://dx.doi.org/10.1016/j.diamond.2015.01.006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2015.01.006" target="_blank" >10.1016/j.diamond.2015.01.006</a>
Alternative languages
Result language
angličtina
Original language name
Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
Original language description
Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppmin the gas phase. The surface of the diamond layers observed by scanning electronmicroscopy consists of(100) and (113)micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. Amaximummobility of 528 cm2 V1 s1 wasmeasured at roomtemperature for a charge carrier concentration of 1.1 1013 cm3. Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
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Volume of the periodical
35
Issue of the periodical within the volume
Mar
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
29-34
UT code for WoS article
000352046700005
EID of the result in the Scopus database
2-s2.0-84921984756