Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556262" target="_blank" >RIV/68378271:_____/22:00556262 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/22:00357708 RIV/68407700:21460/22:00357708
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2022.108887" target="_blank" >https://doi.org/10.1016/j.diamond.2022.108887</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2022.108887" target="_blank" >10.1016/j.diamond.2022.108887</a>
Alternative languages
Result language
angličtina
Original language name
Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
Original language description
Boron-doped diamond layers have been grown by MW PECVD on substrates with a misorientation over the range of 0 to 90° relative to the (100) crystalline plane while keeping all other growth conditions constant. Deposited layers were characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. The deposition rate, surface roughness, and boron incorporation vary according to the substrate misorientation. These results show the essential need for rigorous control of the substrate crystalline orientation in the synthesis of doped diamond for electronic applications. Thick, smooth, and free of surface defects boron-doped epitaxial diamond layers were obtained over a broad range of crystalline orientations at high growth rates and high boron incorporation efficiency.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
1879-0062
Volume of the periodical
122
Issue of the periodical within the volume
Feb
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
108887
UT code for WoS article
000791837700009
EID of the result in the Scopus database
2-s2.0-85124102278