Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449037" target="_blank" >RIV/68378271:_____/15:00449037 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.colsurfb.2015.03.035" target="_blank" >http://dx.doi.org/10.1016/j.colsurfb.2015.03.035</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.colsurfb.2015.03.035" target="_blank" >10.1016/j.colsurfb.2015.03.035</a>

Result language
angličtina
Original language name
Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor
Original language description
We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100x increased leakage currents (up to 10 nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GAP108%2F12%2F0996" target="_blank" >GAP108/12/0996: Bio-inspired Scaffolds as Active Sensor Systems</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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