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Patterning of organic semiconductors for photovoltaic applications by LIFT technology

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455077" target="_blank" >RIV/68378271:_____/15:00455077 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Patterning of organic semiconductors for photovoltaic applications by LIFT technology

  • Original language description

    Laser Induced Forward Transfer (LIFT) is a widely used technique for elegant deposition and patterning of various materials (eg. Metals, oxides, organic substances and even biological material). The most typical attribute of LIFT technique (as presentedby many authors) is utilization of short laser pulses with duration from ps to tens of ns with very high energy per pulse. Such approach requires of usage of expensive laser sources. Our work is focused to alternative instrumentation of LIFT - possibilities of usage of continuous wave (CW) lasers for local deposition and patterning of organic semiconductors. The source substrates were prepared as follows: Thin glass slides with sputtered metal layer (gold, platinum, copper, silver - thickness 100 nm) were cleaned and dried. Side with sputtered metal was then covered with a thin layer of purified organic semiconductors - Perylene, Perylene anhydride, Zn and Sm Phthalocyanines.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA14-10279S" target="_blank" >GA14-10279S: Advanced materials for photovoltaics: substituted phthalocyanine organocomplexes</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů