Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology

Result code in IS VaVaI
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Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Origin of the yellow luminescence band in nitride based semiconductors prepared by the MOVPE technology
Original language description
Nitride semiconductors are the most studied materials nowadays because of their exceptional properties and possible applications. They can be used as light emitting diodes or transistors depending on the material used. A typical feature of the nitride luminescence spectra is a presence of defect interband levels luminescence band. For the luminescence and scintillating applications, it is desirable that the structure has quick response and the decay time is very short, in the order of few nanoseconds. This is the reason why the slow yellow luminescence band is undesirable. It has also high intensity, so it completely shadows the photolumi–nescence of other wavelengths.nIn this work studies of two structures will be presented and discussed, mainly the photoluminescence spectra with yellow band luminescence, its origin and some possible solutions to avoid it. First one is the AlGaN/GaN heterostructure. There the connection between v-pits on layer interfaces and yellow luminescence band will be inferred. Second one is the InGaN/GaN heterostructure where the yellow luminescence band is changing its intensity, compared to the photoluminescence of GaN, with changing the excitation intensity, see Fig. 1. Possible explanation will be offered.n
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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