Role of a-Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00464798" target="_blank" >RIV/68378271:_____/16:00464798 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssa.201532923" target="_blank" >http://dx.doi.org/10.1002/pssa.201532923</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201532923" target="_blank" >10.1002/pssa.201532923</a>
Alternative languages
Result language
angličtina
Original language name
Role of a-Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts
Original language description
Growth of crystalline silicon nanowires at low temperatures by chemical vapour deposition is an important technological challenge for electronic and sensor nanodevices. Here we present a comparative study of crystalline silicon nanowire growth by plasma-enhanced chemical vapour deposition (PECVD) using lead and indium. We compare two different growth methods that produce either in-plane or out-of-plane crystalline Si nanowires (SiNWs) at temperatures below 400C depending on the growth conditions and the catalyst used. The first growth method is based on the deposition of a thin film of amorphous silicon on a substrate at 150C and subsequent thermal annealing at 400C. The second method uses direct SiNWs growth at 400C in PECVD. While the first method produces in-plane Si nanowires with In and no nanowire growth for Pb, the second method gives rise to outof-plane Si nanowires for In and in-plane nanowires for Pb.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA16-12355S" target="_blank" >GA16-12355S: Silicon nanowires for three-dimensional nanoelectronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi. A
ISSN
1862-6300
e-ISSN
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Volume of the periodical
213
Issue of the periodical within the volume
7
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
1821-1825
UT code for WoS article
000385222900025
EID of the result in the Scopus database
2-s2.0-84959281895