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Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521379" target="_blank" >RIV/68378271:_____/19:00521379 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1063/1.5086617" target="_blank" >https://doi.org/10.1063/1.5086617</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.5086617" target="_blank" >10.1063/1.5086617</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

  • Original language description

    Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    114

  • Issue of the periodical within the volume

    13

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    1-5

  • UT code for WoS article

    000463657000015

  • EID of the result in the Scopus database

    2-s2.0-85063785639