Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521379" target="_blank" >RIV/68378271:_____/19:00521379 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1063/1.5086617" target="_blank" >https://doi.org/10.1063/1.5086617</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5086617" target="_blank" >10.1063/1.5086617</a>
Alternative languages
Result language
angličtina
Original language name
Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires
Original language description
Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
114
Issue of the periodical within the volume
13
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
1-5
UT code for WoS article
000463657000015
EID of the result in the Scopus database
2-s2.0-85063785639