Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00466446" target="_blank" >RIV/68378271:_____/16:00466446 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1109/ASDAM.2016.7805919" target="_blank" >http://dx.doi.org/10.1109/ASDAM.2016.7805919</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ASDAM.2016.7805919" target="_blank" >10.1109/ASDAM.2016.7805919</a>

Result language

angličtina

Original language name

Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

Original language description

The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO2 materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on transistors with Ir and IrO2 Schottky contact metallization has been demonstrated and discussed.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/GP14-16549P" target="_blank" >GP14-16549P: Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ASDAM 2016

ISBN

978-150903083-5

ISSN

—

e-ISSN

—

Number of pages

4

Pages from-to

157-160

Publisher name

IEEE

Place of publication

Danvers

Event location

Smolenice

Event date

Nov 13, 2016

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000392530900039