Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471006" target="_blank" >RIV/68378271:_____/16:00471006 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.solmat.2016.06.040" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2016.06.040</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.solmat.2016.06.040" target="_blank" >10.1016/j.solmat.2016.06.040</a>

Result language
angličtina
Original language name
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
Original language description
We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/LM2015087" target="_blank" >LM2015087: Laboratory of Nanostructures and Nanomaterials</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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