GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471296" target="_blank" >RIV/68378271:_____/16:00471296 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
Original language description
It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth conditions. The impact of As on Si surface as well as GaP nucleation on top of this surface were investigated.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů