Electron affinity of B-doped nanocrystalline diamonds

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00486997" target="_blank" >RIV/68378271:_____/17:00486997 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electron affinity of B-doped nanocrystalline diamonds

Original language description

Electron affinity in semiconductors is defined as an energy distance from the conduction band minimum (CBM) to the vacuum level. Usually, the vacuum level is above the CBM known as the positive electron affinity (PEA). In case of negative electron affinity (NEA), the CBM is above the vacuum level. Diamond electron affinity (DEA) can be tuned by its surface termination. Here, the dependence of DEA on a) boron doping and b) surface termination is studied by ultraviolet photoelectron spectroscopy (UPS). Boron doped nanocrystalline diamond films (B-NCD) were grown by double bias enhanced hot filament chemical vapor deposition on Si substrate using the gas mixture of trimethylborane and CH4 in H2. The H-termination was done by hydrogen microwave plasma treatment. It was found that, the electron affinity of B-NCD/H surfaces varies with the boron concentration.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů