Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00574634" target="_blank" >RIV/68378271:_____/23:00574634 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0347693" target="_blank" >https://hdl.handle.net/11104/0347693</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/smll.202208265" target="_blank" >10.1002/smll.202208265</a>
Alternative languages
Result language
angličtina
Original language name
Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry
Original language description
Polycrystalline B-doped diamond is a promising material for high-power aqueous electrochemical applications. The chemical vapor deposition (CVD) of B-doped diamond is diversified by deuterium substituting habitually applied hydrogen. Deuterium in the CVD plasma affects synthesis reactions and leads to a preferential (111) texture and more effective boron incorporation into the lattice, resulting in one order of magnitude higher density of charge carriers. The relevant mechanisms were studied by high-resolution core-level spectroscopies. A rich set of highly occupied and localized surface states exists for samples deposited in deuterium. The enhanced incorporation of boron into (111) facet of diamond leads to surface electronic states below the Fermi level and above the bulk valence band edge. This band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA20-11140S" target="_blank" >GA20-11140S: Essential Elements of Diamond Power Electronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Small
ISSN
1613-6810
e-ISSN
1613-6829
Volume of the periodical
19
Issue of the periodical within the volume
26
Country of publishing house
US - UNITED STATES
Number of pages
20
Pages from-to
2208265
UT code for WoS article
000954781600001
EID of the result in the Scopus database
2-s2.0-85150928898