Diamond thin film technologies: nucleation & growth

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487065" target="_blank" >RIV/68378271:_____/17:00487065 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Diamond thin film technologies: nucleation & growth

Original language description

The present work encompasses the progress in diamond thin film growth on foreign (non-diamond) substrates at low-pressure using chemical vapor deposition. We will introduce the hybrid HF CVD system with double bias which allows the nucleation by ion bombardment of the conductive substrates at low negative voltages (100÷200 V) where the surface coverage can be simply controlled as the function of process time and process parameters. Next, the ultrasonic seeding employing diamond nanoparticles without/with polymer composite will be pointed out as an effective way to achieve high seeding densities up to 1013 cm-2 and a consequent growth of ultrathin diamond films (<50 nm) on substrates of complex 3D geometries.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů