DC magnetron sputtering of ZnO thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487114" target="_blank" >RIV/68378271:_____/17:00487114 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

DC magnetron sputtering of ZnO thin films

Original language description

Zinc Oxide (ZnO) is a semiconductor with a wide band gap, large exciton binding energy, high electron mobility, high refractive index, high biocompatibility and diversity of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. Our samples are the nominally undoped ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma and the aluminium doped ZnO thin films deposited by DC magnetron sputtering of ZnO:Al target in the argon. After hydrogen plasma treatment, the increase of the infrared optical absorption, related to free carrier concentration, is detected below the optical absorption edge. The increase of the optical absorption correlates with the increase of the electrical conductivity related to the increase of the free carrier concentration. On the other hand, after oxidation and thermal annealing in air, the optical absorption is significantly reduced in the infrared region and the electrical resistivity increases.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů