Increasing scintillator active region thickness by InGaN/GaN QW number
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496184" target="_blank" >RIV/68378271:_____/18:00496184 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Increasing scintillator active region thickness by InGaN/GaN QW number
Original language description
Luminescence results of InGaN/GaN multiple quantum well (QW) structures with number of QWs from 10 to 60 are studied in this work.The aim is to optimize a thickness of active region for maximization of the intensity of faster blue QW emission and suppression of the slower QW defect band luminiscence, which is undesired for fast scintillator application.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů