Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496195" target="_blank" >RIV/68378271:_____/18:00496195 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Original language description

In our laboratory we prepare InGaN/GaN quantum wells (QWs) that should be used in scintillating structures with fast and strong luminescence response with short decay time. Unfortunately, in the photoluminescence (PL) spectrum there is also a slow broad defect band at around 470 nm besides the excitonic peak at around 420 nm. We assume that the main defect band contribution comes from the five lowest QWs that face the transition from higher growth temperature of GaN buffer to the lower growth temperature of InGaN QWs. SIMS data of selected samples prove the contamination under the lowest QWs and show that some elements are contaminating not only a thin region beneath QWs, but also the QWs themselves. We expect that the contamination is due to lowering the temperature which is a well-known phenomenon and thus we introduce a low temperature (LT) buffer under QWs. From PL spectra we can see that the sample with LT buffer has more intense excitonic peak and partly suppressed defect band.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů