Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496211" target="_blank" >RIV/68378271:_____/18:00496211 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth

Original language description

Detection and imaging of ionizing radiation is one of prospective applications of InGaN/GaN multiple quantum well structures. Besides efficiency and temporal resolution, spatial homogeneity is an important factor. We quantified it using 2D Fourier transform of cathodoluminescence images, separating the finest inhomogeneity caused by V-pits (100-500 nm) from one caused by dislocation bunching (1-2 μm) and from coarser modulation of QW efficiency. This approach, possibly combined with electron-energy and optical spectrum resolution, is useful for future high-performance imaging screen development.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů